Invention Grant
- Patent Title: Through silicon via repair
- Patent Title (中): 通过硅片修复
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Application No.: US13013378Application Date: 2011-01-25
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Publication No.: US08637353B2Publication Date: 2014-01-28
- Inventor: Michel J. Abou-Khalil , Robert J. Gauthier, Jr. , Tom C. Lee , Junjun Li , Souvick Mitra , Christopher S. Putnam
- Applicant: Michel J. Abou-Khalil , Robert J. Gauthier, Jr. , Tom C. Lee , Junjun Li , Souvick Mitra , Christopher S. Putnam
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Wood, Herron & Evans LLP
- Agent Anthony J. Canale
- Main IPC: H01L21/82
- IPC: H01L21/82

Abstract:
Methods and systems for altering the electrical resistance of a wiring path. The electrical resistance of the wiring path is compared with a target electrical resistance value. If the electrical resistance of the wiring path exceeds the target electrical resistance value, an electrical current is selectively applied to the wiring path to physically alter a portion of the wiring path. The current may be selected to alter the wiring path such that the electrical resistance drops to a value less than or equal to the target electrical resistance value.
Public/Granted literature
- US20120190133A1 THROUGH SILICON VIA REPAIR Public/Granted day:2012-07-26
Information query
IPC分类: