Method for producing an insulation layer between a first electrode and a second electrode in a trench of a semiconductor body, wherein the method comprises the following features: providing a semiconductor body with a trench formed therein, wherein a first electrode is formed in a lower part of the trench, producing an insulation layer on the first electrode and at the sidewalls of the trench in an upper part of the trench in such a way that the insulation layer is formed in a U-shaped fashion in the trench, producing a protective layer on the insulation layer at least at the bottom of the remaining void in the trench, removing the insulation layer at the sidewalls of the trench in the upper part of the trench, removing the protective layer, producing a second electrode at least on the insulation layer above the first electrode.