Invention Grant
- Patent Title: Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same
- Patent Title (中): 用于碳化硅器件的扩散连接端接结构以及包含其的制造碳化硅器件的方法
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Application No.: US12719497Application Date: 2010-03-08
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Publication No.: US08637386B2Publication Date: 2014-01-28
- Inventor: Qingchun Zhang , Anant K. Agarwal , Tangali S. Sudarshan , Alexander Bolotnikov
- Applicant: Qingchun Zhang , Anant K. Agarwal , Tangali S. Sudarshan , Alexander Bolotnikov
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel Sibley & Sajovec
- Main IPC: H01L21/22
- IPC: H01L21/22 ; H01L21/38
Abstract:
An electronic device includes a silicon carbide layer having a first conductivity type and a main junction adjacent a surface of the silicon carbide layer, and a junction termination region at the surface of the silicon carbide layer adjacent the main junction. Charge in the junction termination region decreases with lateral distance from the main junction, and a maximum charge in the junction termination region may be less than about 2×1014 cm−2.
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