Etching method, method for manufacturing semiconductor device, and etching device

Invention Grant

US08637409B2 Etching method, method for manufacturing semiconductor device, and etching device 有权

Title translation: 蚀刻方法，半导体器件的制造方法和蚀刻装置

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Patent Title: Etching method, method for manufacturing semiconductor device, and etching device
Patent Title (中): 蚀刻方法，半导体器件的制造方法和蚀刻装置
Application No.: US13399241

Application Date: 2012-02-17
Publication No.: US08637409B2

Publication Date: 2014-01-28
Inventor: Shirou Ozaki , Masayuki Takeda
Applicant: Shirou Ozaki , Masayuki Takeda
Applicant Address: JP Kawasaki
Assignee: Fujitsu Limited
Current Assignee: Fujitsu Limited
Current Assignee Address: JP Kawasaki
Agency: Kratz, Quintos & Hanson, LLP
Priority: JP2011-055988 20110314
Main IPC: H01L21/302
IPC: H01L21/302

Etching method, method for manufacturing semiconductor device, and etching device

Abstract:

An etching method includes: applying a radiation to an etching aqueous solution; and etching a material to be etched by using the etching aqueous solution irradiated with the radiation.

Abstract(Chinese):

蚀刻方法包括：向蚀刻水溶液施加辐射; 并通过使用被辐射照射的蚀刻水溶液来蚀刻待蚀刻的材料。

Public/Granted literature

US20120238104A1 ETCHING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND ETCHING DEVICE Public/Granted day:2012-09-20

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割