Invention Grant
US08637794B2 Heating plate with planar heating zones for semiconductor processing
有权
加热板采用平面加热区进行半导体加工
- Patent Title: Heating plate with planar heating zones for semiconductor processing
- Patent Title (中): 加热板采用平面加热区进行半导体加工
-
Application No.: US12582991Application Date: 2009-10-21
-
Publication No.: US08637794B2Publication Date: 2014-01-28
- Inventor: Harmeet Singh , Keith Gaff , Neil Benjamin , Keith Comendant
- Applicant: Harmeet Singh , Keith Gaff , Neil Benjamin , Keith Comendant
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Buchanan Ingersoll & Rooney PC
- Main IPC: H05B3/10
- IPC: H05B3/10

Abstract:
A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, power supply lines, power return lines and vias.
Public/Granted literature
- US20110092072A1 HEATING PLATE WITH PLANAR HEATING ZONES FOR SEMICONDUCTOR PROCESSING Public/Granted day:2011-04-21
Information query