Invention Grant
US08637794B2 Heating plate with planar heating zones for semiconductor processing 有权
加热板采用平面加热区进行半导体加工

Heating plate with planar heating zones for semiconductor processing
Abstract:
A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, power supply lines, power return lines and vias.
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