Invention Grant
US08637802B2 Photosensor, semiconductor device including photosensor, and light measurement method using photosensor
有权
光传感器,包括光电传感器的半导体器件和使用光电传感器的光测量方法
- Patent Title: Photosensor, semiconductor device including photosensor, and light measurement method using photosensor
- Patent Title (中): 光传感器,包括光电传感器的半导体器件和使用光电传感器的光测量方法
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Application No.: US13154771Application Date: 2011-06-07
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Publication No.: US08637802B2Publication Date: 2014-01-28
- Inventor: Koichiro Kamata
- Applicant: Koichiro Kamata
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2010-138916 20100618
- Main IPC: H01L33/08
- IPC: H01L33/08 ; H01L31/08 ; H01L31/113

Abstract:
An object is to provide a photosensor utilizing an oxide semiconductor in which a refreshing operation is unnecessary, a semiconductor device provided with the photosensor, and a light measurement method utilizing the photosensor. It is found that a constant gate current can be obtained by applying a gate voltage in a pulsed manner to a transistor including a channel formed using an oxide semiconductor, and this is applied to a photosensor. Since a refreshing operation of the photosensor is unnecessary, it is possible to measure the illuminance of light with small power consumption through a high-speed and easy measurement procedure. A transistor utilizing an oxide semiconductor having a relatively high mobility, a small S value, and a small off-state current can form a photosensor; therefore, a multifunction semiconductor device can be obtained through a small number of steps.
Public/Granted literature
- US20110310381A1 PHOTOSENSOR, SEMICONDUCTOR DEVICE INCLUDING PHOTOSENSOR, AND LIGHT MEASUREMENT METHOD USING PHOTOSENSOR Public/Granted day:2011-12-22
Information query
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