Disclosed herein is a device that includes: an interlayer insulation film having a through hole; and a phase change storage element provided in the through hole. The phase change storage element includes: an outer electrode being a conductive film of cylindrical shape and being formed along an inner wall of the through hole; a buffer insulation film being an insulation film of cylindrical shape and being formed along an inner wall of the outer electrode, an upper end of the buffer insulation film being recessed in part to form a recess; a phase change film filling an interior of the recess; and an inner electrode being a conductive film formed along an inner wall of the buffer insulation film including a surface of the phase change film.