Invention Grant
- Patent Title: Semiconductor structure including a zirconium oxide material
- Patent Title (中): 包括氧化锆材料的半导体结构
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Application No.: US13601127Application Date: 2012-08-31
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Publication No.: US08637846B1Publication Date: 2014-01-28
- Inventor: Dale W. Collins , D. V. Nirmal Ramaswamy , Matthew N. Rocklein , Swapnil A. Lengade
- Applicant: Dale W. Collins , D. V. Nirmal Ramaswamy , Matthew N. Rocklein , Swapnil A. Lengade
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01G9/042
Abstract:
Semiconductor structures including a zirconium oxide material and methods of forming the same are described herein. As an example, a semiconductor structure can include a zirconium oxide material, a perovskite structure material, and a noble metal material formed between the zirconium oxide material and the perovskite structure material.
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