Invention Grant
- Patent Title: Device housing and method for making the same
- Patent Title (中): 设备外壳及其制作方法
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Application No.: US13087512Application Date: 2011-04-15
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Publication No.: US08637862B2Publication Date: 2014-01-28
- Inventor: Hsin-Pei Chang , Wen-Rong Chen , Huann-Wu Chiang , Cheng-Shi Chen , Ying-Ying Wang
- Applicant: Hsin-Pei Chang , Wen-Rong Chen , Huann-Wu Chiang , Cheng-Shi Chen , Ying-Ying Wang
- Applicant Address: CN Shenzhen TW New Taipei
- Assignee: Hong Fu Jin Precision Industry (ShenZhen) Co., Ltd,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Hong Fu Jin Precision Industry (ShenZhen) Co., Ltd,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Shenzhen TW New Taipei
- Agency: Altis Law Group, Inc.
- Priority: CN201010232894 20100721
- Main IPC: H01L29/10
- IPC: H01L29/10
Abstract:
A device housing is provided. The device housing includes a substrate, a silicon dioxide film formed on the substrate, and a zinc oxide film formed on the silicon dioxide film. The silicon dioxide film has micrometer sized structures. The zinc oxide film has nanometer sized structures. A method for making the device housing is also described there.
Public/Granted literature
- US20120018340A1 DEVICE HOUSING AND METHOD FOR MAKING THE SAME Public/Granted day:2012-01-26
Information query
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