Invention Grant
- Patent Title: Semiconductor light emitting element
- Patent Title (中): 半导体发光元件
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Application No.: US13369096Application Date: 2012-02-08
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Publication No.: US08637886B2Publication Date: 2014-01-28
- Inventor: Yukie Tsuji
- Applicant: Yukie Tsuji
- Applicant Address: JP Aichi-ken
- Assignee: Toyoda Gosei Co., Ltd.
- Current Assignee: Toyoda Gosei Co., Ltd.
- Current Assignee Address: JP Aichi-ken
- Agency: Sughrue Mion, PLLC
- Priority: JP2011-026136 20110209
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A semiconductor light emitting element includes: a light emitting layer and a p-type semiconductor layer laminated on an n-type semiconductor layer; a transparent conductive layer laminated on the p-type semiconductor layer; a transparent insulating layer laminated on the transparent conductive layer and the exposed n-type semiconductor layer, the transparent insulating layer having plural tapered through-holes formed therein; a p-electrode formed on the transparent conductive layer with the transparent insulating layer interposed therebetween, the p-electrode being connected to the transparent conductive layer via the through-holes provided for the transparent insulating layer; and an n-electrode formed on the n-type semiconductor layer with the transparent insulating layer interposed therebetween, the n-electrode being connected to the n-type semiconductor layer via the through-holes provided for the transparent insulating layer.
Public/Granted literature
- US20120199861A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT Public/Granted day:2012-08-09
Information query
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