Disclosed is a semiconductor light emitting element (1), which includes: an n-type semiconductor layer (140); a light emitting layer (150), which is laminated on one surface of the n-type semiconductor layer (140) such that a part of the surface is exposed, and which emits light when a current is carried therein; a p-type semiconductor layer (160) laminated on the light emitting layer (150); a multilayer reflection film (180), which is configured by alternately laminating low refractive index layers (180a) and high refractive index layers (180b) that have a refractive index higher than that of the low refractive index layers (180a) and also have transparency with respect to light emitted from the light emitting layer (150), and which is laminated on the exposed portion of the n-type semiconductor layer (140), the exposed portion being on one side of the n-type semiconductor layer; an n-conductor portion (400), which is formed by penetrating the multilayer reflection film (180), and which has one end thereof connected to the exposed portion of the n-type semiconductor layer (140); and an n-electrode (310), which is laminated on the multilayer reflection film (180), and which has the other end of the n-conductor portion (400) connected thereto. Thus, light extraction efficiency is improved in the semiconductor light emitting element mounted by flip-chip bonding.