Invention Grant
- Patent Title: Light-emitting device with improved electrode structures
- Patent Title (中): 具有改善的电极结构的发光器件
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Application No.: US12472809Application Date: 2009-05-27
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Publication No.: US08637891B2Publication Date: 2014-01-28
- Inventor: Steven D. Lester , Chao-Kun Lin
- Applicant: Steven D. Lester , Chao-Kun Lin
- Applicant Address: JP Tokyo
- Assignee: Toshiba Techno Center Inc.
- Current Assignee: Toshiba Techno Center Inc.
- Current Assignee Address: JP Tokyo
- Agency: Hogan Lovells US LLP
- Priority: TW97134499A 20080909; TW97135436A 20080916
- Main IPC: H01L33/38
- IPC: H01L33/38
Abstract:
A light-emitting device includes first and second semiconductor layers and a light-emitting layer between the first and second semiconductor layers. The light-emitting device also includes an improved electrode structures.
Public/Granted literature
- US20100059765A1 Light-Emitting Device With Improved Electrode Structures Public/Granted day:2010-03-11
Information query
IPC分类:
