Invention Grant
US08637900B2 Electrostatic discharge (ESD) silicon controlled rectifier (SCR) structure
有权
静电放电（ESD）可控硅整流（SCR）结构
- Patent Title: Electrostatic discharge (ESD) silicon controlled rectifier (SCR) structure
- Patent Title (中): 静电放电（ESD）可控硅整流（SCR）结构
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Application No.: US13686422Application Date: 2012-11-27
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Publication No.: US08637900B2Publication Date: 2014-01-28
- Inventor: Robert J. Gauthier, Jr. , Junjun Li , Ankit Srivastava
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Anthony Canale
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A structure includes first and second silicon controlled rectifiers (SCRs) formed in a substrate. The first and the second SCRs each include at least one component commonly shared between the first and the second SCRs.
Public/Granted literature
- US20130087830A1 ELECTROSTATIC DISCHARGE (ESD) SILICON CONTROLLED RECTIFIER (SCR) STRUCTURE Public/Granted day:2013-04-11
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