Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12907653Application Date: 2010-10-19
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Publication No.: US08637902B2Publication Date: 2014-01-28
- Inventor: Ki Yeol Park , Woo Chul Jeon , Young Hwan Park , Jung Hee Lee
- Applicant: Ki Yeol Park , Woo Chul Jeon , Young Hwan Park , Jung Hee Lee
- Applicant Address: KR Suwon, Gyunggi-do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon, Gyunggi-do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2010-0026804 20100325
- Main IPC: H01L29/737
- IPC: H01L29/737 ; H01L29/778
Abstract:
There is provided a semiconductor device having a High Electron Mobility Transistor (HEMT) structure allowing for enhanced performance and a method of manufacturing the same. The semiconductor device includes a base substrate; a semiconductor layer provided on the base substrate; a source electrode, a gate electrode and a drain electrode provided on the semiconductor layer to be spaced apart from one another; and an ohmic-contact layer partially provided at an interface between the drain electrode and the semiconductor layer.
Public/Granted literature
- US20110233612A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2011-09-29
Information query
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