Invention Grant
- Patent Title: Nonvolatile memory device and method for fabricating the same
- Patent Title (中): 非易失性存储器件及其制造方法
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Application No.: US13304551Application Date: 2011-11-25
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Publication No.: US08637913B2Publication Date: 2014-01-28
- Inventor: Hyun-Seung Yoo , Eun-Seok Choi
- Applicant: Hyun-Seung Yoo , Eun-Seok Choi
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2011-0049978 20110526
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336
Abstract:
A nonvolatile memory device includes a channel vertically extending from a substrate and comprising a first region that is doped with first impurities and a second region that is disposed under the first region, a plurality of memory cells and a selection transistor stacked over the substrate along the channel, and a diffusion barrier interposed between the first region and the second region, wherein a density of the first impurities is higher than a density of impurities of the second region.
Public/Granted literature
- US20120299076A1 NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2012-11-29
Information query
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