Invention Grant
- Patent Title: Semiconductor devices and methods of forming the same
- Patent Title (中): 半导体器件及其形成方法
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Application No.: US13267267Application Date: 2011-10-06
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Publication No.: US08637927B2Publication Date: 2014-01-28
- Inventor: Heedon Hwang , Ji-Young Min , Jongchul Park , Insang Jeon , Woogwan Shim
- Applicant: Heedon Hwang , Ji-Young Min , Jongchul Park , Insang Jeon , Woogwan Shim
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec PA
- Priority: KR10-2010-0097388 20101006
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Semiconductor devices and methods of forming the same may be provided. The semiconductor devices may include a trench in a substrate. The semiconductor devices may also include a bulk electrode within opposing sidewalls of the trench. The semiconductor devices may further include a liner electrode between the bulk electrode and the opposing sidewalls of the trench. The liner electrode may include a sidewall portion between a sidewall of the bulk electrode and one of the opposing sidewalls of the trench.
Public/Granted literature
- US20120086074A1 Semiconductor Devices And Methods of Forming The Same Public/Granted day:2012-04-12
Information query
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