Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13416600Application Date: 2012-03-09
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Publication No.: US08637932B2Publication Date: 2014-01-28
- Inventor: Shingo Eguchi
- Applicant: Shingo Eguchi
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2008-114882 20080425; JP2008-114883 20080425
- Main IPC: H01L21/84
- IPC: H01L21/84

Abstract:
In a semiconductor integrated circuit sandwiched between a pair of a first impact resistance layer and a second impact resistance layer, an impact diffusion layer is provided between the semiconductor integrated circuit and the second impact resistance layer. By provision of the impact resistance layer against the external stress and the impact diffusion layer for diffusing the impact, force applied to the semiconductor integrated circuit per unit area is reduced, so that the semiconductor integrated circuit is protected. The impact diffusion layer preferably has a low modulus of elasticity and high breaking modulus.
Public/Granted literature
- US20120161297A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2012-06-28
Information query
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