Invention Grant
- Patent Title: Semiconductor device with pocket regions and method of manufacturing the same
- Patent Title (中): 具有口袋区域的半导体器件及其制造方法
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Application No.: US12958555Application Date: 2010-12-02
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Publication No.: US08637938B2Publication Date: 2014-01-28
- Inventor: Akihiro Usujima
- Applicant: Akihiro Usujima
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2009-297363 20091228
- Main IPC: H01L29/772
- IPC: H01L29/772 ; H01L21/336
Abstract:
A semiconductor device includes a first pocket region and a second pocket region. The source region includes a first extension region having a concentration peak located at a first depth from a surface of the semiconductor substrate, and the first pocket region has a concentration peak located deeper than the first depth, and the drain region includes a second extension region having a concentration peak located at a second depth from the surface of the semiconductor substrate, and the second pocket region has a concentration peak located shallower than the second depth.
Public/Granted literature
- US20110156173A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2011-06-30
Information query
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