Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12825007Application Date: 2010-06-28
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Publication No.: US08637939B2Publication Date: 2014-01-28
- Inventor: Kyung-Doo Kang
- Applicant: Kyung-Doo Kang
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2009-0134899 20091230
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/02
Abstract:
A semiconductor device includes a channel layer formed over a substrate, a gate formed over the channel layer, junction regions formed on both sides of the channel layer to protrude from the substrate, and a buried barrier layer formed between the channel layer and the junction regions.
Public/Granted literature
- US20110156171A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2011-06-30
Information query
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