Invention Grant
US08637950B2 Semiconductor device, method for manufacturing the same, method for generating mask data, mask and computer readable recording medium
有权
半导体装置及其制造方法，掩模数据生成方法，掩模和计算机可读记录介质
- Patent Title: Semiconductor device, method for manufacturing the same, method for generating mask data, mask and computer readable recording medium
- Patent Title (中): 半导体装置及其制造方法，掩模数据生成方法，掩模和计算机可读记录介质
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Application No.: US13795573Application Date: 2013-03-12
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Publication No.: US08637950B2Publication Date: 2014-01-28
- Inventor: Katsumi Mori , Kei Kawahara , Yoshikazu Kasuya
- Applicant: Seiko Epson Corporation
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2000-075671 20000317
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L31/00 ; H01L29/40
Abstract:
A semiconductor device has first wiring layers and a plurality of dummy wiring layers that are provided on the same level as the first wiring layers. The semiconductor device defines a row direction, and first virtual linear lines extending in a direction traversing the row direction. The row direction and the first virtual linear lines define an angle of 2-40 degrees, and the dummy wiring layers are disposed in a manner to be located on the first virtual linear lines. The semiconductor device also defines a column direction perpendicular to the row direction, and second virtual linear lines extending in a direction traversing the column direction. The column direction and the second virtual linear lines define an angle of 2-40 degrees, and the dummy wiring layers are disposed in a manner to be located on the second virtual linear lines.
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