Invention Grant
US08637962B2 Semiconductor dice including at least one blind hole, wafers including such semiconductor dice, and intermediate products made while forming at least one blind hole in a substrate 失效
包括至少一个盲孔的半导体管芯,包括这种半导体管芯的晶片,以及在衬底中形成至少一个盲孔而制成的中间产品

  • Patent Title: Semiconductor dice including at least one blind hole, wafers including such semiconductor dice, and intermediate products made while forming at least one blind hole in a substrate
  • Patent Title (中): 包括至少一个盲孔的半导体管芯,包括这种半导体管芯的晶片,以及在衬底中形成至少一个盲孔而制成的中间产品
  • Application No.: US13620065
    Application Date: 2012-09-14
  • Publication No.: US08637962B2
    Publication Date: 2014-01-28
  • Inventor: Salman AkramSidney B. Rigg
  • Applicant: Salman AkramSidney B. Rigg
  • Applicant Address: US ID Boise
  • Assignee: Micron Technology, Inc.
  • Current Assignee: Micron Technology, Inc.
  • Current Assignee Address: US ID Boise
  • Agency: TraskBritt
  • Main IPC: H01L21/4763
  • IPC: H01L21/4763
Semiconductor dice including at least one blind hole, wafers including such semiconductor dice, and intermediate products made while forming at least one blind hole in a substrate
Abstract:
Semiconductor dice comprise at least one bond pad on an active surface of the semiconductor die. At least one blind hole extends from a back surface of the semiconductor die opposing the active surface, through a thickness of the semiconductor die, to an underside of the at least one bond pad. At least one quantity of passivation material covers at least a sidewall surface of the at least one blind hole. At least one conductive material is disposed in the at least one blind hole adjacent and in electrical communication with the at least one bond pad and adjacent the at least one quantity of passivation material.
Information query
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02 .半导体器件或其部件的制造或处理
H01L21/04 ..至少具有一个跃变势垒或表面势垒的器件,例如PN结、耗尽层、载体集结层
H01L21/34 ...具有H01L21/06,H01L21/16及H01L21/18各组不包含的或有或无杂质,例如掺杂材料的半导体的器件
H01L21/46 ....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的(在半导体材料上制作电极的入H01L21/44)
H01L21/461 .....改变半导体材料的表面物理特性或形状的,例如腐蚀、抛光、切割
H01L21/4763 ......非绝缘层的沉积,例如绝缘层上的导电层、电阻层;这些层的后处理(电极的制造入H01L21/28)
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