Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13113380Application Date: 2011-05-23
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Publication No.: US08637979B2Publication Date: 2014-01-28
- Inventor: Noboru Miyamoto
- Applicant: Noboru Miyamoto
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-136115 20100615
- Main IPC: H01L23/34
- IPC: H01L23/34

Abstract:
A semiconductor device includes a semiconductor chip having a first main surface and a second main surface; a stacked structure on which the semiconductor chip is disposed; and a cooling body on which the stacked structure is disposed. The stacked structure includes a first thermal conductor fixed to the cooling body, an insulator disposed on the first thermal conductor, and a second thermal conductor disposed on the insulator and having the semiconductor chip disposed thereon. The first main surface of the semiconductor chip opposite to the second main surface in contact with the stacked structure is sealed with an insulation material. At least a part of the first thermal conductor protrudes outwardly of the insulation material in plan view.
Public/Granted literature
- US20110304039A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-12-15
Information query
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