Invention Grant
- Patent Title: Semiconductor assemblies with multi-level substrates and associated methods of manufacturing
- Patent Title (中): 具有多层基板的半导体组件及相关制造方法
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Application No.: US13206321Application Date: 2011-08-09
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Publication No.: US08637987B2Publication Date: 2014-01-28
- Inventor: Chin Hui Chong , Hong Wan Ng
- Applicant: Chin Hui Chong , Hong Wan Ng
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40

Abstract:
Various embodiments of semiconductor assemblies with multi-level substrates and associated methods of manufacturing are described below. In one embodiment, a substrate for carrying a semiconductor die includes a first routing level, a second routing level, and a conductive via between the first and second routing levels. The conductive via has a first end proximate the first routing level and a second end proximate the second routing level. The first routing level includes a terminal and a first trace between the terminal and the first end of the conductive via. The second routing level includes a second trace between the second end of the conductive via and a ball site. The terminal of the first routing level and the ball site of the second routing level are both accessible for electrical connections from the same side of the substrate.
Public/Granted literature
- US20130037949A1 SEMICONDUCTOR ASSEMBLIES WITH MULTI-LEVEL SUBSTRATES AND ASSOCIATED METHODS OF MANUFACTURING Public/Granted day:2013-02-14
Information query
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