Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13176170Application Date: 2011-07-05
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Publication No.: US08637990B2Publication Date: 2014-01-28
- Inventor: Doo-Kang Kim , Dae-Young Seo
- Applicant: Doo-Kang Kim , Dae-Young Seo
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2010-0064461 20100705
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
A semiconductor device includes a word line, a bit line crossing the word line, an active region arranged in an oblique direction at the word line and the bit line, and a contact pad contacting the active region, where the contact pad extends in the oblique direction.
Public/Granted literature
- US20120001346A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2012-01-05
Information query
IPC分类:
