Invention Grant
US08638577B2 Semiconductor device for DC-DC converter including high side and low side semiconductor switches
有权
包括高侧和低侧半导体开关的DC-DC转换器的半导体装置
- Patent Title: Semiconductor device for DC-DC converter including high side and low side semiconductor switches
- Patent Title (中): 包括高侧和低侧半导体开关的DC-DC转换器的半导体装置
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Application No.: US13230947Application Date: 2011-09-13
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Publication No.: US08638577B2Publication Date: 2014-01-28
- Inventor: Masaki Shiraishi , Takayuki Hashimoto , Noboru Akiyama
- Applicant: Masaki Shiraishi , Takayuki Hashimoto , Noboru Akiyama
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2006-046171 20060223
- Main IPC: H02M1/38
- IPC: H02M1/38 ; H02M3/155

Abstract:
In a non-isolated DC/DC converter, a reference potential for a low-side pre-driver which drives a gate of a low-side MOSFET is applied from a portion except for a main circuit passing through a high-side MOSFET and the low-side MOSFET so that a parasitic inductance between a source of the low-side MOSFET and the pre-driver is increased without increasing the sum of parasitic inductances in the main circuit and negative potential driving of the gate of the low-side MOSFET can be performed and a self turn-on phenomenon can be prevented without adding any member and changing drive system.
Public/Granted literature
- US20120001609A1 DC/DC CONVERTER Public/Granted day:2012-01-05
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