Invention Grant
US08638596B2 Non-volatile memory saving cell information in a non-volatile memory array
有权
非易失性存储器将单元信息保存在非易失性存储器阵列中
- Patent Title: Non-volatile memory saving cell information in a non-volatile memory array
- Patent Title (中): 非易失性存储器将单元信息保存在非易失性存储器阵列中
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Application No.: US13189784Application Date: 2011-07-25
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Publication No.: US08638596B2Publication Date: 2014-01-28
- Inventor: Jung Pill Kim , Taehyun Kim , Hari M. Rao
- Applicant: Jung Pill Kim , Taehyun Kim , Hari M. Rao
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Sam Talpalatsky; Nicholas J. Pauley; Joseph Agusta
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
Systems and methods for saving repair cell address information in a non-volatile magnetoresistive random access memory (MRAM) having an array of MRAM cells are disclosed. A memory access circuit is coupled to the MRAM, and is configured to store failed cell address information in the MRAM.
Public/Granted literature
- US20130028009A1 NON-VOLATILE MEMORY SAVING CELL INFORMATION IN A NON-VOLATILE MEMORY ARRAY Public/Granted day:2013-01-31
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