Invention Grant
US08638603B2 Data storage system having multi-level memory device and operating method thereof
有权
具有多级存储器件的数据存储系统及其操作方法
- Patent Title: Data storage system having multi-level memory device and operating method thereof
- Patent Title (中): 具有多级存储器件的数据存储系统及其操作方法
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Application No.: US13466280Application Date: 2012-05-08
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Publication No.: US08638603B2Publication Date: 2014-01-28
- Inventor: DongHun Kwak
- Applicant: DongHun Kwak
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Muir Patent Consulting, PLLC
- Priority: KR10-2011-0058312 20110616
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04 ; G11C7/10

Abstract:
A method for a data storage system is disclosed. The method includes providing a memory cell array, and providing N blocks in a first region of the memory cell array, N being an integer greater than 1. Each cell of each block of the N blocks is configured to store no more than N−1 bits of data. The method further includes providing a block in the second region of the memory cell array. Each cell of the block in the second region is configured to store N bits of data. The method additionally includes configuring the data storage system so that when data is programmed to the memory cell array, N pages of the data are initially stored in N respective blocks of the first region of the memory cell array, and then the N pages of the data are stored in the block of the second region.
Public/Granted literature
- US20120320673A1 DATA STORAGE SYSTEM HAVING MULTI-LEVEL MEMORY DEVICE AND OPERATING METHOD THEREOF Public/Granted day:2012-12-20
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