Invention Grant
- Patent Title: High speed interface for multi-level memory
- Patent Title (中): 用于多级存储器的高速接口
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Application No.: US13872729Application Date: 2013-04-29
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Publication No.: US08638619B2Publication Date: 2014-01-28
- Inventor: Pantas Sutardja
- Applicant: Marvell World Trade Ltd.
- Applicant Address: BB St. Michael
- Assignee: Marvell World Trade Ltd.
- Current Assignee: Marvell World Trade Ltd.
- Current Assignee Address: BB St. Michael
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C7/22

Abstract:
A memory chip includes a plurality of storage elements. A method of controlling the memory chip includes receiving a plurality of target values from a memory controller. Each target value of the plurality of target values received from the memory controller corresponds to a respective one of the plurality of storage elements. The method further includes, for each storage element of the plurality of storage elements, adjusting a measurable parameter of the storage element until the measurable parameter of the storage element reaches the target value corresponding to the storage element received from the memory controller.
Public/Granted literature
- US20130235638A1 HIGH SPEED INTERFACE FOR MULTI-LEVEL MEMORY Public/Granted day:2013-09-12
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