Invention Grant
US08638627B2 Semiconductor memory device for minimizing mismatch of sense amplifier
有权
用于最小化读出放大器失配的半导体存储器件
- Patent Title: Semiconductor memory device for minimizing mismatch of sense amplifier
- Patent Title (中): 用于最小化读出放大器失配的半导体存储器件
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Application No.: US13347450Application Date: 2012-01-10
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Publication No.: US08638627B2Publication Date: 2014-01-28
- Inventor: Dong Chul Koo
- Applicant: Dong Chul Koo
- Applicant Address: KR Icheon
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon
- Priority: KR10-2011-0015620 20110220
- Main IPC: G11C7/06
- IPC: G11C7/06
Abstract:
A semiconductor memory device is provided. The semiconductor memory device includes a cross-coupled latch type sense amplifier and a buffer that prevents mismatch. The buffer is formed between PMOS transistors and NMOS transistors of the sense amplifier so that mismatch for transistors operating in pair can be minimized.
Public/Granted literature
- US20120213025A1 SEMICONDUCTOR MEMORY DEVICE FOR MINIMIZING MISMATCH OF SENSE AMPLIFIER Public/Granted day:2012-08-23
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