Invention Grant
- Patent Title: Maintenance of amplified signals using high-voltage-threshold transistors
- Patent Title (中): 使用高压阈值晶体管维护放大信号
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Application No.: US13480701Application Date: 2012-05-25
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Publication No.: US08638628B2Publication Date: 2014-01-28
- Inventor: Simon J. Lovett
- Applicant: Simon J. Lovett
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze PA
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
Systems, apparatus, memory devices, sense amplifiers and methods are provided, such as a system that includes an input node, a first transistor having a gate that couples to the input node, and a second transistor having another gate that couples to the input node. In one or more embodiments, the second transistor has a greater activation voltage threshold than does the first transistor and the first transistor amplifies a signal that is present on the input node. In one such embodiment, after the first transistor amplifies the signal, the second transistor maintains the amplified signal on the input node while the first transistor is deactivated.
Public/Granted literature
- US20120230140A1 MAINTENANCE OF AMPLIFIED SIGNALS USING HIGH-VOLTAGE-THRESHOLD TRANSISTORS Public/Granted day:2012-09-13
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