Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12609907Application Date: 2009-10-30
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Publication No.: US08638631B2Publication Date: 2014-01-28
- Inventor: Naohisa Nishioka
- Applicant: Naohisa Nishioka
- Priority: JP2008-281595 20081031
- Main IPC: G11C17/18
- IPC: G11C17/18
Abstract:
A semiconductor device has an antifuse element and a measurement unit. The antifuse element stores information according to whether the antifuse element is in the broken or unbroken state. The measurement unit determines a resistance value related to the resistance value of the broken antifuse element.
Public/Granted literature
- US20100109683A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-05-06
Information query
