Invention Grant
- Patent Title: Metrology for GST film thickness and phase
- Patent Title (中): 测量GST膜厚度和相位
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Application No.: US12267526Application Date: 2008-11-07
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Publication No.: US08639377B2Publication Date: 2014-01-28
- Inventor: Kun Xu , Feng Q Liu , Yuchun Wang , Abraham Ravid , Wen-Chiang Tu
- Applicant: Kun Xu , Feng Q Liu , Yuchun Wang , Abraham Ravid , Wen-Chiang Tu
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Fish & Richardson P.C.
- Main IPC: G06F19/00
- IPC: G06F19/00 ; F04B19/16 ; F04D27/02 ; F04D23/00

Abstract:
Methods of determining thickness and phase of a GST layer on a semiconductor substrate are described using intensity spectra within the infra-red range. In particular, techniques for using certain transmission at certain frequencies are disclosed for faster thickness and phase determination in an in-line or standalone metrology/monitoring system for CMP processes.
Public/Granted literature
- US20100116990A1 METROLOGY FOR GST FILM THICKNESS AND PHASE Public/Granted day:2010-05-13
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