Invention Grant
US08640943B2 Fabrication method of semiconductor integrated circuit device 有权
半导体集成电路器件的制造方法

Fabrication method of semiconductor integrated circuit device
Abstract:
Productivity is to be improved in assembling a semiconductor integrated circuit device. A matrix substrate is provided and semiconductor chips are disposed on a first heating stage, then the matrix substrate is disposed above the semiconductor chips on the first heating stage, subsequently the semiconductor chips and the matrix substrate are bonded to each other temporarily by thermocompression bonding while heating the chips directly by the first heating stage, thereafter the temporarily bonded matrix substrate is disposed on a second heating stage adjacent to the first heating stage, and then on the second heating stage the semiconductor chips are thermocompression-bonded to the matrix substrate while being heated directly by the second heating stage.
Public/Granted literature
Information query
Patent Agency Ranking
0/0