Invention Grant
- Patent Title: Method for fabricating monolithic two-dimensional nanostructures
- Patent Title (中): 制造单片二维纳米结构的方法
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Application No.: US12125043Application Date: 2008-05-21
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Publication No.: US08641912B2Publication Date: 2014-02-04
- Inventor: James R. Heath , Dunwei Wang , Yuri Bunimovich , Akram Boukai
- Applicant: James R. Heath , Dunwei Wang , Yuri Bunimovich , Akram Boukai
- Applicant Address: US CA Pasadena
- Assignee: California Institute of Technology
- Current Assignee: California Institute of Technology
- Current Assignee Address: US CA Pasadena
- Agency: Steinfl & Bruno, LLP
- Main IPC: C23F1/00
- IPC: C23F1/00 ; B44C1/22
Abstract:
A patterning method for the creation of two-dimensional nanowire structures. Nanowire patterning methods are used with lithographical patterning approaches to form patterns in a layer of epoxy and resist material. These patterns are then transferred to an underlying thin film to produce a two-dimensional structure with desired characteristics.
Public/Granted literature
- US20090117741A1 METHOD FOR FABRICATING MONOLITHIC TWO-DIMENSIONAL NANOSTRUCTURES Public/Granted day:2009-05-07
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