Invention Grant
US08641929B2 Low-temperature-sinterable bonding material, and bonding method using the bonding material
有权
低温烧结性接合材料以及使用该接合材料的接合方法
- Patent Title: Low-temperature-sinterable bonding material, and bonding method using the bonding material
- Patent Title (中): 低温烧结性接合材料以及使用该接合材料的接合方法
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Application No.: US13702718Application Date: 2011-06-10
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Publication No.: US08641929B2Publication Date: 2014-02-04
- Inventor: Keiichi Endoh , Yutaka Hisaeda , Akihiro Miyazawa , Aiko Nagahara , Toshihiko Ueyama
- Applicant: Keiichi Endoh , Yutaka Hisaeda , Akihiro Miyazawa , Aiko Nagahara , Toshihiko Ueyama
- Applicant Address: JP Tokyo
- Assignee: Dowa Electronics Materials Co., Ltd.
- Current Assignee: Dowa Electronics Materials Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: WOPCT/JP2010/059921 20100611
- International Application: PCT/JP2011/063418 WO 20110610
- International Announcement: WO2011/155615 WO 20111215
- Main IPC: H01B1/02
- IPC: H01B1/02 ; B41J2/16 ; C04B28/36

Abstract:
Provided is a bonding material which enables formation of a bonded article in nitrogen, and can exhibit bonding strength to withstand practical use while having reduced bonding fluctuations between samples without a heat treatment procedure under pressurized or high temperature conditions. The bonding material comprises: silver nanoparticles having an average primary particle diameter of 1 to 200 nm and coated with an organic substance having 8 carbon atoms or less; a dispersion medium having a boiling point of 230° C. or higher; and a flux component including an organic matter having at least two carboxyl groups. Particularly, it is preferable to use the silver nanoparticles and submicron silver particles in combination.
Public/Granted literature
- US20130081759A1 LOW-TEMPERATURE-SINTERABLE BONDING MATERIAL, AND BONDING METHOD USING THE BONDING MATERIAL Public/Granted day:2013-04-04
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