A photovoltaic device with a low degradation rate and a high stability efficiency. In one aspect, the photovoltaic device includes: a substrate; a first electrode disposed on the substrate; at least one photoelectric transformation layer disposed on the first electrode, the photoelectric transformation layer including a light absorbing layer; and a second electrode disposed on the photoelectric transformation layer; and wherein the light absorbing layer included in at least the one photoelectric transformation layer includes a first sub-layer and a second sub-layer, each of which includes hydrogenated amorphous silicon based material and a crystalline silicon grain respectively.