Invention Grant
- Patent Title: Systems and methods for plasma doping microfeature workpieces
- Patent Title (中): 等离子体掺杂微型工件的系统和方法
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Application No.: US11217882Application Date: 2005-09-01
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Publication No.: US08642135B2Publication Date: 2014-02-04
- Inventor: Shu Qin , Allen McTeer
- Applicant: Shu Qin , Allen McTeer
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: C23C14/14
- IPC: C23C14/14 ; C23C14/48 ; C23C16/503 ; C23C16/505 ; C23C16/515 ; H05H1/46 ; H01L21/265 ; C23C14/16

Abstract:
Systems and methods for plasma doping microfeature workpieces are disclosed herein. In one embodiment, a method of implanting boron ions into a region of a workpiece includes generating a plasma in a chamber, selectively applying a pulsed electrical potential to the workpiece with a duty cycle of between approximately 20 percent and approximately 50 percent, and implanting an ion specie into the region of the workpiece.
Public/Granted literature
- US20070048453A1 Systems and methods for plasma doping microfeature workpieces Public/Granted day:2007-03-01
Information query
IPC分类: