Invention Grant
- Patent Title: Silicon carbide crystal ingot, silicon carbide crystal wafer, and method for fabricating silicon carbide crystal ingot
- Patent Title (中): 碳化硅晶体锭，碳化硅晶片，以及碳化硅晶锭的制造方法
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Application No.: US13475360Application Date: 2012-05-18
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Publication No.: US08642154B2Publication Date: 2014-02-04
- Inventor: Tsutomu Hori , Makoto Sasaki , Taro Nishiguchi , Shinsuke Fujiwara
- Applicant: Tsutomu Hori , Makoto Sasaki , Taro Nishiguchi , Shinsuke Fujiwara
- Applicant Address: JP Osaka-shi, Osaka
- Assignee: Sumitomo Electric Insustries, Ltd.
- Current Assignee: Sumitomo Electric Insustries, Ltd.
- Current Assignee Address: JP Osaka-shi, Osaka
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2011-123040 20110601
- Main IPC: B32B3/02
- IPC: B32B3/02
Abstract:
A silicon carbide crystal ingot having a surface greater than or equal to 4 inches, having an n-type dopant concentration greater than or equal to 1×1015 atoms/cm3 and less than or equal to 1×1020 atoms/cm3, a metal atom concentration greater than or equal to 1×1014 atoms/cm3 and less than or equal to 1×1018 atoms/cm3, and not exceeding the n-type dopant concentration, and a metal atom concentration gradient less than or equal to 1×1017 atoms/(cm3·mm), a silicon carbide single crystal wafer produced using the ingot, and a method for fabricating the silicon carbide crystal ingot.
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