Invention Grant
US08642155B2 Information storage medium using nanocrystal particles, method of manufacturing the information storage apparatus including the information storage medium
有权
使用纳米晶粒的信息存储介质，信息存储介质的制造方法以及包括信息存储介质的信息存储装置
- Patent Title: Information storage medium using nanocrystal particles, method of manufacturing the information storage apparatus including the information storage medium
- Patent Title (中): 使用纳米晶粒的信息存储介质，信息存储介质的制造方法以及包括信息存储介质的信息存储装置
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Application No.: US13533717Application Date: 2012-06-26
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Publication No.: US08642155B2Publication Date: 2014-02-04
- Inventor: Seung-bum Hong , Simon Buehlmann , Shin-ae Jun , Sung-hoond Choa , Eun-joo Jang , Yong-kwan Kim
- Applicant: Seung-bum Hong , Simon Buehlmann , Shin-ae Jun , Sung-hoond Choa , Eun-joo Jang , Yong-kwan Kim
- Applicant Address: US CA Cupertino
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Cupertino
- Agency: Hollingsworth Davis, LLC
- Priority: KR10-2007-0012369 20070206
- Main IPC: G11B7/24
- IPC: G11B7/24
Abstract:
Provided is an information storage medium using nanocrystal particles, a method of manufacturing the information storage medium, and an information storage apparatus including the information storage medium. The information storage medium includes a conductive layer, a first insulating layer formed on the conductive layer, a nanocrystal layer that is formed on the first insulating layer and includes conductive nanocrystal particles that can trap charges, and a second insulating layer formed on the nanocrystal layer.
Public/Granted literature
Information query
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