Invention Grant
- Patent Title: Silicon-carbonaceous encapsulated materials
- Patent Title (中): 硅碳胶囊材料
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Application No.: US13217691Application Date: 2011-08-25
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Publication No.: US08642214B2Publication Date: 2014-02-04
- Inventor: Damien Dambournet , Ilias Belharouak , Khalil Amine
- Applicant: Damien Dambournet , Ilias Belharouak , Khalil Amine
- Applicant Address: US IL Chicago
- Assignee: UChicago Argonne, LLC
- Current Assignee: UChicago Argonne, LLC
- Current Assignee Address: US IL Chicago
- Agency: Foley & Lardner LLP
- Main IPC: H01M4/04
- IPC: H01M4/04

Abstract:
A process includes preparing a solution including a silicon precursor or mixture of silicon precursors and a monomer or mixture of monomers; polymerizing the monomer to form a polymer-silicon precursor matrix; and pyrolyzing the polymer-silicon precursor matrix to form an electrochemically active carbon-coated silicon material.
Public/Granted literature
- US20130052536A1 SILICON-CARBONACEOUS ENCAPSULATED MATERIALS Public/Granted day:2013-02-28
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