Invention Grant
US08642369B2 Vertically structured LED by integrating nitride semiconductors with Zn(Mg,Cd,Be)O(S,Se) and method for making same
有权
将氮化物半导体与Zn（Mg，Cd，Be）O（S，Se）相结合的垂直结构的LED及其制造方法
- Patent Title: Vertically structured LED by integrating nitride semiconductors with Zn(Mg,Cd,Be)O(S,Se) and method for making same
- Patent Title (中): 将氮化物半导体与Zn（Mg，Cd，Be）O（S，Se）相结合的垂直结构的LED及其制造方法
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Application No.: US12397224Application Date: 2009-03-03
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Publication No.: US08642369B2Publication Date: 2014-02-04
- Inventor: Jizhi Zhang , Jin Joo Song
- Applicant: Jizhi Zhang , Jin Joo Song
- Applicant Address: US CA Brea
- Assignee: ZN Technology, Inc.
- Current Assignee: ZN Technology, Inc.
- Current Assignee Address: US CA Brea
- Agency: Klein, O'Neill & Singh, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A light emitting diode (LED) with a vertical structure, including electrical contacts on opposing sides, provides increased brightness. In some embodiments an LED includes a nitride semiconductor light emitting component grown on a sapphire substrate, a Zn(Mg,Cd,Be)O(S,Se) assembly formed on the nitride semiconductor component, and a further Zn(Mg Cd,Be)O(S,Se) assembly bonded on an opposing side of the light emitting component, which is exposed by removing the sapphire substrate. Electrical contacts may be connected to the Zn(Mg,Cd,Be)O(S,Se) assembly and the further Zn(Mg,Cd,Be)O(S,Se) assembly. Herein Zn(Mg,Cd,Be)O(S,Se) is a II-VI semiconductor satisfying a formula Zn1−a−b−cMgaCdbBecO1−p−qSpSeq, wherein a=0˜1, b=0˜1, c=0˜1, p=0˜1, and q=0˜1.
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