Invention Grant
- Patent Title: Method for manufacturing light emitting diodes including forming circuit structures with a connecting section
- Patent Title (中): 包括形成具有连接部分的电路结构的发光二极管的方法
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Application No.: US13332380Application Date: 2011-12-21
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Publication No.: US08642388B2Publication Date: 2014-02-04
- Inventor: Chao-Hsiung Chang
- Applicant: Chao-Hsiung Chang
- Applicant Address: TW Hsinchu Hsien
- Assignee: Advanced Optoelectronics Technology, Inc.
- Current Assignee: Advanced Optoelectronics Technology, Inc.
- Current Assignee Address: TW Hsinchu Hsien
- Agency: Altis Law Group, Inc.
- Priority: CN201110104678 20110426
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L33/00 ; H01L23/22 ; H01L23/24 ; H01L23/52 ; H01L23/12

Abstract:
A method for manufacturing LEDs includes following steps: forming circuit structures on a substrate, each circuit structure having a first metal layer and a second metal layer formed on opposite surfaces of the substrate and a connecting section interconnecting the first and second metal layers; cutting through each circuit structure along a middle of the connecting section to form first and second electrical connecting portions insulated from each other via a gap therebetween; arranging LED chips on the substrate and electrically connecting the LED chips to the first and second electrical connecting portions; forming an encapsulation on the substrate to cover the LED chips; and cutting through the substrate and the encapsulation between the first and second electrical connecting portions of neighboring circuit structures to obtain the LEDs.
Public/Granted literature
- US20120273829A1 METHOD FOR MANUFACTURING LIGHT EMITTING DIODES AND LIGHT EMITTING DIODES OBTAINED THEREBY Public/Granted day:2012-11-01
Information query
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