A semiconductor-on-insulator (SOI) substrate complementary metal oxide semiconductor (CMOS) device and fabrication methods include a p-type field effect transistor (PFET) and an n-type field effect transistor (NFET). Each of the PFET and the NFET include a transistor body of a first type of material and source and drain regions. The source and drain regions have a second type of material such that an injection charge into the source and drain region is greater than a parasitic charge into the transistor body to decrease parasitic bipolar current gain, increase critical charge (Qcrit) and reduce sensitivity to soft errors.