Invention Grant
- Patent Title: Light-emitting diode device structure with SixNy layer
- Patent Title (中): 具有SixNy层的发光二极管器件结构
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Application No.: US13355322Application Date: 2012-01-20
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Publication No.: US08642421B2Publication Date: 2014-02-04
- Inventor: Chuong Anh Tran
- Applicant: Chuong Anh Tran
- Applicant Address: TW Chu-Nan
- Assignee: SemiLEDS Optoelectronics Co., Ltd.
- Current Assignee: SemiLEDS Optoelectronics Co., Ltd.
- Current Assignee Address: TW Chu-Nan
- Agent Stephen A. Gratton
- Main IPC: H01L21/8234
- IPC: H01L21/8234
Abstract:
A light-emitting diode (LED) structure fabricated with a SixNy layer responsible for providing increased light extraction out of a surface of the LED is provided. Such LED structures fabricated with a SixNy layer may have increased luminous efficiency when compared to conventional LED structures fabricated without a SixNy layer. Methods for creating such LED structures are also provided.
Public/Granted literature
- US20120112163A1 LIGHT-EMITTING DIODE DEVICE STRUCTURE WITH SixNy LAYER Public/Granted day:2012-05-10
Information query
IPC分类:
