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Invention Grant
US08642422B2 Method of manufacturing a semiconductor device 有权
制造半导体器件的方法

  • Patent Title: Method of manufacturing a semiconductor device
  • Patent Title (中): 制造半导体器件的方法
  • Application No.: US13315060
    Application Date: 2011-12-08
  • Publication No.: US08642422B2
    Publication Date: 2014-02-04
  • Inventor: Koji Shimbayashi
  • Applicant: Koji Shimbayashi
  • Applicant Address: US CA Sunnyvale
  • Assignee: Spansion LLC
  • Current Assignee: Spansion LLC
  • Current Assignee Address: US CA Sunnyvale
  • Main IPC: H01L21/8242
  • IPC: H01L21/8242
Method of manufacturing a semiconductor device
Abstract:
In the semiconductor device composing MOS transistor on which impurities are added from the surface of a P-type substrate, the region of immediate below a gate, layer is the P-type substrate on which the impurities are not added, and first and second MOS devices, having an N-type diffusion layer are provided on the surface region of the P-type substrate circumscribing the gate layer. The gate layer of the first MOS device, and the N-type diffusion layer of the second MOS device are connected, and the N-type diffusion layer of the first MOS device and the gate layer of the second MOS device are connected, and thereby a first capacitive element is composed.
Abstract(Chinese):

在构成从P型基板的表面添加有杂质的MOS晶体管的半导体器件中，栅极以下的区域即为不添加杂质的P型基板，第一和第二MOS 具有N型扩散层的器件设置在与栅极层对置的P型基板的表面区域上。 连接第一MOS器件的栅极层和第二MOS器件的N型扩散层，并且连接第一MOS器件的N型扩散层和第二MOS器件的栅极层，从而 组成第一电容元件。

Public/Granted literature
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Espacenet
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70 .由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77 ..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78 ...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82 ....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822 .....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232 ......场效应工艺
H01L21/8234 .......MIS工艺
H01L21/8239 ........存储器结构
H01L21/8242 .........动态随机存取存储结构（DRAM）
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