Invention Grant
- Patent Title: Process for the realization of islands of at least partially relaxed strained material
- Patent Title (中): 用于实现至少部分松弛的应变材料的岛的方法
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Application No.: US13429000Application Date: 2012-03-23
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Publication No.: US08642443B2Publication Date: 2014-02-04
- Inventor: Romain Boulet
- Applicant: Romain Boulet
- Applicant Address: FR Bernin
- Assignee: Soitec
- Current Assignee: Soitec
- Current Assignee Address: FR Bernin
- Agency: Winston & Strawn LLP
- Priority: FR1152496 20110325
- Main IPC: H01L21/30
- IPC: H01L21/30
Abstract:
The present invention relates to the field of semiconductor manufacturing. More specifically, it relates to a method of forming islands of at least partially relaxed strained material on a target substrate including the steps of forming islands of the strained material over a side of a first substrate; bonding the first substrate, on the side including the islands of the strained material, to the target substrate; and after the step of bonding splitting the first substrate from the target substrate and at least partially relaxing the islands of the strained material by a first heat treatment.
Public/Granted literature
- US20120241918A1 PROCESS FOR THE REALIZATION OF ISLANDS OF AT LEAST PARTIALLY RELAXED STRAINED MATERIAL Public/Granted day:2012-09-27
Information query
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