Invention Grant
- Patent Title: Low temperature junction growth using hot-wire chemical vapor deposition
- Patent Title (中): 使用热线化学气相沉积的低温结生长
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Application No.: US12742001Application Date: 2007-11-09
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Publication No.: US08642450B2Publication Date: 2014-02-04
- Inventor: Qi Wang , Matthew Page , Eugene Iwaniczko , Tihu Wang , Yanfa Yan
- Applicant: Qi Wang , Matthew Page , Eugene Iwaniczko , Tihu Wang , Yanfa Yan
- Applicant Address: US CO Golden
- Assignee: Alliance for Sustainable Energy, LLC
- Current Assignee: Alliance for Sustainable Energy, LLC
- Current Assignee Address: US CO Golden
- Agent Paul J. White
- International Application: PCT/US2007/084252 WO 20071109
- International Announcement: WO2009/061322 WO 20090514
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36
Abstract:
A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.
Public/Granted literature
- US20100263717A1 Low Temperature Junction Growth Using Hot-Wire Chemical Vapor Deposition Public/Granted day:2010-10-21
Information query
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