Invention Grant
- Patent Title: Method for manufacturing silicon carbide semiconductor device
- Patent Title (中): 碳化硅半导体器件的制造方法
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Application No.: US13502991Application Date: 2011-02-25
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Publication No.: US08642476B2Publication Date: 2014-02-04
- Inventor: Satomi Itoh , Hiromu Shiomi , Yasuo Namikawa , Keiji Wada , Mitsuru Shimazu , Toru Hiyoshi
- Applicant: Satomi Itoh , Hiromu Shiomi , Yasuo Namikawa , Keiji Wada , Mitsuru Shimazu , Toru Hiyoshi
- Applicant Address: JP Osaka-shi
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka-shi
- Agency: Venable LLP
- Agent Michael A. Sartori
- Priority: JP2010-136872 20100616
- International Application: PCT/JP2011/054333 WO 20110225
- International Announcement: WO2011/158534 WO 20111222
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
There is provided a method for manufacturing a SiC semiconductor device achieving improved performance. The method for manufacturing the SiC semiconductor device includes the following steps. That is, a SiC semiconductor is prepared which has a first surface having at least a portion into which impurities are implanted. By cleaning the first surface of the SiC semiconductor, a second surface is formed. On the second surface, a Si-containing film is formed. By oxidizing the Si-containing film, an oxide film constituting the SiC semiconductor device is formed.
Public/Granted literature
- US20120208302A1 METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE Public/Granted day:2012-08-16
Information query
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