Invention Grant
- Patent Title: Thin film forming method, thin film forming apparatus, and program
- Patent Title (中): 薄膜形成方法，薄膜形成装置和程序
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Application No.: US13337743Application Date: 2011-12-27
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Publication No.: US08642486B2Publication Date: 2014-02-04
- Inventor: Toshiyuki Ikeuchi , Pao-Hwa Chou , Kazuya Yamamoto , Kentarou Sera
- Applicant: Toshiyuki Ikeuchi , Pao-Hwa Chou , Kazuya Yamamoto , Kentarou Sera
- Applicant Address: JP
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP
- Agency: Cantor Colburn LLP
- Priority: JP2010-293816 20101228
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
A control unit heats a reaction pipe to a load temperature by controlling a temperature-raising heater 16, and then makes semiconductor wafers received in the reaction pipe. Next, the control unit heats the reaction pipe in which the semiconductor wafers are received to a film formation temperature by controlling the temperature-raising heater, and then forms thin films on the semiconductor wafers by supplying a film forming gas into the reaction pipe from a process gas introducing pipe. Also, the control unit sets the load temperature to a temperature higher than the film formation temperature.
Public/Granted literature
- US20120164847A1 THIN FILM FORMING METHOD, THIN FILM FORMING APPARATUS, AND PROGRAM Public/Granted day:2012-06-28
Information query
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