Invention Grant
US08642796B2 Organoruthenium compound for chemical deposition and chemical deposition process using the organoruthenium compound
有权
用于化学沉积的有机钌化合物和使用有机钌化合物的化学沉积方法
- Patent Title: Organoruthenium compound for chemical deposition and chemical deposition process using the organoruthenium compound
- Patent Title (中): 用于化学沉积的有机钌化合物和使用有机钌化合物的化学沉积方法
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Application No.: US13161012Application Date: 2011-06-15
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Publication No.: US08642796B2Publication Date: 2014-02-04
- Inventor: Masayuki Saito , Kazuharu Suzuki , Shunichi Nabeya
- Applicant: Masayuki Saito , Kazuharu Suzuki , Shunichi Nabeya
- Applicant Address: JP Tokyo
- Assignee: Tanaka Kikinzoku Kogyo K. K.
- Current Assignee: Tanaka Kikinzoku Kogyo K. K.
- Current Assignee Address: JP Tokyo
- Agent Richard S. Roberts
- Priority: JPP2010-143391 20100624
- Main IPC: C07F15/00
- IPC: C07F15/00 ; C23C16/00
Abstract:
An object of the present invention is to provide an organoruthenium compound which has good film formation characteristics as an organoruthenium compound for chemical deposition, has a high vapor pressure, and can easily form a film even when hydrogen is used as a reactant gas. The present invention relates to an organoruthenium compound, dicarbonyl-bis(5-methyl-2,4-hexanediketonato)ruthenium (II) which can have isomers 1 to 3, wherein the content of the isomer 2 is 30% by mass or more, the content of the isomer 3 is 30% by mass or less, and the balance is the isomer 1.
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